EPC and uPI Semiconductor are partnering to offer the uP1966 GaN half-bridge driver to the markets.
The uP1966E is an 85 V dual-channel gate driver designed to drive both high-side and low-side eGaN® FETS in half-bridge and full-bridge topologies. The driver integrates an internal bootstrap supply and UVLO in a small 1.6 mm x 1.6 mm WLCSP form factor.
The uP1966E can be used together with EPC eGaN FETs in bridge topologies including DC-DC buck and boost converters, LLC DC-DC converters, buck-boost, or bidirectional converters for battery charging.
The uP1966E is rated at 85 V and ideal to pair with EPC 80 V and 100 V FETs and integrated half-bridges.
The uP1966E driver is featured on many EPC evaluation boards including DC-DC buck converters; EPC9143, EPC9153, a DC-DC LLC converter, EPC9149, and most of the generic 80 V and 100 V half-bridge evaluation boards of which the EPC9097 and EPC90123 are among the most popular.
Pairing the u1966E to EPC GaN transistors offers a very cost-effective driver, reduces total solution cost, and accelerates time to market for your GaN-based designs.
About EPC EPC is the leader in enhancement mode gallium nitride (eGaN®) based power management. eGaN FETs and integrated circuits provide performance many times greater than the best silicon power MOSFETs in applications such as DC-DC converters, remote sensing technology (lidar), motor drives for emobility, robotics, and drones, and low cost satellites.
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